Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT Discrete, Renesas Electronics IGBT (Insulated Gate Bipolar Transistor) is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.25545+$19.309750+$18.4845200+$18.0224500+$17.90681000+$17.79132500+$17.65935000+$17.57687500+$17.4942 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 50A 40000mW 3Pin(3+Tab) TO-3PFM Tube13085+$28.087050+$26.8867200+$26.2146500+$26.04651000+$25.87852500+$25.68645000+$25.56647500+$25.4464 -
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Category: IGBTtransistorDescription: IGBT Transistor IGBT27805+$24.283450+$23.2456200+$22.6645500+$22.51921000+$22.37392500+$22.20795000+$22.10417500+$22.0003 -
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Category: IGBTtransistorDescription: IGBT Transistor IGBT67945+$26.961550+$25.8093200+$25.1640500+$25.00271000+$24.84142500+$24.65715000+$24.54197500+$24.4266 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 16A 30000mW 3Pin(3+Tab) TO-220FL Tube32625+$19.128350+$18.3109200+$17.8531500+$17.73871000+$17.62422500+$17.49345000+$17.41177500+$17.3299 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 90A 55000mW 3Pin(3+Tab) TO-3PFM Tube53621+$71.961310+$68.8325100+$68.2693250+$67.8313500+$67.14301000+$66.83012500+$66.39215000+$66.0166 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 85A 297600mW 3Pin(3+Tab) TO-247A Tube80421+$40.746810+$38.4089100+$36.6721250+$36.4049500+$36.13771000+$35.83712500+$35.56995000+$35.4029 -
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Category: IGBTtransistorDescription: AC-DC Power Supply Dual-OUT 5V/12V 10A/5A 88W46081+$36.920910+$34.8025100+$33.2288250+$32.9867500+$32.74461000+$32.47222500+$32.23015000+$32.0788 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 70A 320000mW 3Pin(3+Tab) TO-3P Tube35531+$54.998810+$51.8432100+$49.4989250+$49.1383500+$48.77761000+$48.37192500+$48.01135000+$47.7859 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 90A 328900mW 3Pin(3+Tab) TO-247A Tube26835+$24.580550+$23.5301200+$22.9418500+$22.79481000+$22.64772500+$22.47965000+$22.37467500+$22.2695 -
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Category: IGBTtransistorDescription: NChannel IGBT for Strobe Flash Nch IGBT for Strobe Flash46605+$4.051425+$3.751350+$3.5412100+$3.4512500+$3.39112500+$3.31615000+$3.286110000+$3.2411 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 50A 290000mW 3Pin(3+Tab) TO-247 Tube63365+$23.976850+$22.9522200+$22.3784500+$22.23491000+$22.09152500+$21.92755000+$21.82507500+$21.7226 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 50A 260400mW 3Pin(3+Tab) TO-247 Tube94645+$30.948850+$29.6262200+$28.8856500+$28.70041000+$28.51532500+$28.30365000+$28.17147500+$28.0391 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 45A 40000mW 3Pin(3+Tab) TO-3PFM Tube4911 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 50A 122000mW 3Pin(2+Tab) LDPAK(S)-1 T/R4189 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 500V 45000mW 3Pin(3+Tab) TO-220FL Tube6672 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 45A 40000mW 3Pin(3+Tab) TO-3PFM Tube9328 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 41200mW 3Pin(3+Tab) TO-3PFM Tube1874 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 25A 63000mW 3Pin(2+Tab) LDPAK(S)-1 T/R3506 -
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Category: IGBTtransistorDescription: IGBT Discrete, Renesas Electronics IGBT (Insulated Gate Bipolar Transistor) is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.5547 -
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Category: IGBTtransistorDescription: * Low collector to emitter saturation voltage * VCE(sat) = 1.35V typ. (at IC = 50A, VGE = 15V, Ta = 25℃) * Built in fast recovery diode in one package * Trench gate and thin wafer technology * High speed switching * tf = 74ns typ. (at IC = 30A, VCE = 400V, VGE = 15V, Rg = 5Ω, Ta = 25℃, inductive load)5972 -
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Category: IGBTtransistorDescription: RENESAS RJH60F7DPQ-A0#T0 Single transistor, IGBT, 90 A, 1.6 V, 328.9 W, 600 V, TO-247, 3 pins1413 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 16A 52000mW 3Pin(2+Tab) LDPAK(S)-1 T/R6706
